Effects of bottom electrodes on dielectric properties of epitaxial 2% Mn doped Ba(ZrTi)O thin films

2 mol% Mn doped Ba(ZrTi)O (Mn-BZT) thin films were prepared by pulsed laser deposition (PLD) on single crystal oxide substrates LaAlO(001) and MgO(001), with conductive oxide bottom electrodes LaNiO and SrRuO, respectively. Both the Mn-BZT films and the bottom electrode films could be -axial oriented with a cube-on-cube arrangement on the corresponding substrates. The dielectric properties measured with parallel plate capacitor configurations of Au/Mn-BZT/LNO and Au/Mn-BZT/SRO revealed that the Mn-BZT film on LNO bottom electrode exhibited comparatively higher dielectric constant, larger dielectric tunability and lower dielectric loss than that on SRO. It could be mainly attributed to the better epitaxial growth characteristics and mismatch stress of Mn-BZT thin film on LNO, as well as less misfit dislocation and the better morphology of LNO bottom electrode.