The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Journal of Electronic Materials(2017)

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Abstract
We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride barrier photodiodes working in a middle wavelength infrared radiation and a long wavelength infrared radiation range of an infrared radiation spectrum. Detailed numerical calculations of the detector performance were made with our own computer software taking into account Shockley Hall Read, Auger, band-to-band and trap-assisted tunneling and dislocation-related currents. We have also simulated a fluctuation phenomena by using our Langevin-like numerical method to analyze shot, diffusion, generation–recombination and 1/ f noise.
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Key words
HOT MCT barrier detectors,valence band offset,MOCVD technology
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