Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

Yan Jun,Ma Shenglin,Jin Yufeng,Wang Wei,Chen Jing,Luo Rongfeng,Cai Han,Li Jiwei,Xia Yanming,Hu Lilin,He Shuwei,Tang Zhongjun

IEEE Transactions on Components, Packaging and Manufacturing Technology（2018）

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摘要

In this paper, a high-resistivity silicon (HR-Si) interposer integrated with through-silicon via (TSV) electrically grounded coplanar waveguide (CPW) line is presented for 2.5-D/3-D heterogeneous integration of radio frequency (RF) microelectronics devices. In addition, design of TSV interconnection composed of two coaxial ladder-hollow-annular Cu (copper) TSVs of different diameters is utilized t...

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关键词

Through-silicon vias,Radio frequency,Coplanar waveguides,Silicon,Substrates,Microelectronics,Conductivity

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