Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

Yuan Mei,Luo Wen,Xu Xiaote,Chang Kuan-Chang,Chang Ting-Chang,Liu Chuan,Zhou Hang

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)（2017）

引用 0|浏览10

暂无评分

摘要

Organometal halide perovskite material was investigated as a promising candidate for resistive random-access memory (RRAM). In order to improve the stability of perovskite RRAM, a polymethyl methacrylate (PMMA) interlayer was inserted between perovskite and metal electrode. High ON-OFF current ratio (10 ⁶ ) and operating voltage as low as 0.5 V were achieved in the PMMA encapsulated perovskite RRAM.

查看译文

关键词

perovskite,resistive switching memory,filament,passivation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要