ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)（2017）
摘要
A metallic-target reactive co-sputtering technology is used to fabricate zinc tin oxide (ZTO) thin-film transistors (TFTs). The effect of the O
2
/(Ar+O
2
) flow rate ratio on the performance of the resulting TFTs is investigated in detail. It is found that an O
2
/(Ar+O
2
) ratio of 11%-12% produces devices with the best performance, including a linear mobility of 8.6 cm
2
/Vs, subthreshold swing of 0.36 V/decade, and on-to-off current ratio of exceeding 1×10
8
.
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关键词
Thin-film transistors (TFTs),zinc tin oxide (ZTO),reactive co-sputtering
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