Highly Robust AHHVSCR‐Based ESD Protection Circuit
ETRI Journal(2016)
Abstract
In this paper, a new structure for an advanced high holding voltage silicon controlled
rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR‐based
electrostatic discharge (ESD) protection circuit can protect integrated circuits from
ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so
as to prevent a state of latch‐up from occurring due to a low holding voltage. We
use a TACD simulation to conduct a comparative analysis of three types of circuit
— (i) an AHHVSCR‐based ESD protection circuit having the proposed new structure (that
is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR‐based ESD protection
circuit, and (iii) a standard HHVSCR‐based ESD protection circuit. A circuit having
the proposed new structure is fabricated using 0.18 μm Bipolar‐CMOS–DMOS technology.
The fabricated circuit is also evaluated using Transmission‐Line Pulse measurements
to confirm its electrical characteristics, and human‐body model and machine model
tests are used to confirm its robustness. The fabricated circuit has a holding voltage
of 18.78 V and a second breakdown current of more than 8 A.
MoreTranslated text
Key words
ESD protection circuit,SCR,robustness,trigger voltage,holding voltage
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