A Low Noise Low Offset Readout Circuit for Magnetic-Random-Access-Memory.
IEEE Transactions on Circuits and Systems I: Regular Papers(2018)
Abstract
A unique readout circuit topology aimed at integration with a novel type of magnetic random access memory (MRAM) is presented. The properties of the new MRAM bitcell are introduced, and the specifics of the circuit used to interface with the CMOS circuitry are described. The noise transfer function and effectiveness of the proposed topology with its practical limitations are discussed. Post-silico...
MoreTranslated text
Key words
Thermal noise,Topology,Switches,Circuit topology,Magnetization,Magnetic circuits,Capacitors
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined