Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs.

This paper proposes a novel approach to enhance the STT-MRAMs read margin based on the concept of dynamic reference (DR). Our dynamic reference scheme dynamically adjusts the sense amplifier reference voltage according to the bitline voltage, aiming to widen the difference between the bitline and the reference voltage (i.e., the read margin). As a result, larger variations can be accommodated, thu...