A 1tb 4b/cell 64-Stacked-wl 3D NAND Flash Memory with 12mb/s Program Throughput
2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC)（2018）
关键词
4b/cell 64-stacked-WL 3D NAND flash memory,production quality,three-dimensional stacked-word-line NAND Flash memory,4b/cell 3D NAND Flash memory,4b/cell technology,3D-wordline-stacking technology,3b/cell 3D NAND Flash memory,program throughput,1Tb 4b/cell 64-stacked-WL,3D-NAND technology,3b/cell NAND Flash memory,byte rate 12.0 MByte/s
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要