Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process
Microelectronic Engineering（2016）
Abstract
In this article we report on the reduction of redeposition during inductively coupled plasma (ICP) etching of benzocyclobutene (BCB) with a soft mask in a sulfur hexafluoride/oxygen (SF6/O2) plasma. We have developed an anisotropic ICP recipe to fabricate vertical interconnects through BCB for our indium phosphide (InP) transferred-substrate DHBT technology. In this context the new recipe has an etch inhomogeneity on 3in. wafer of
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Key words
InP,BCB,RIE,ICP,Dry etch,Redeposition,SF6,O2,Al2O3
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