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A Fully Integrated Multimode Front-End Module For Gsm/Edge/Td-Scdma/Td-Lte Applications Using A Class-F Cmos Power Amplifier

ISSCC(2017)

Cited 4|Views3
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Abstract
The RF front-end complexity in 4G multimode multiband cellular radios has increased dramatically, requiring integration of PAs, filters and switches in a single module to reduce the RF footprint. This paper presents a fully integrated multimode TDD transmit front-end module (TXM) supporting GSM/EDGE/TD-SCDMA/TD-LTE in multiple bands. The TXM is implemented with three die on a 2-layer laminate LGA module (Figs. 13.1.1 and 13.1.7). Two multimode multiband power amplifier paths (LB/HB) are implemented in a 0.153μm 1P6M CMOS process, followed by power combiners and harmonic filters in a 0.18μm 3M2V IPD die and finally an SP10T antenna switch in a 0.18μm 1P3M SOI process. The Si substrate of good thermal conductivity dissipates the heat generated by PA transistors to the laminated substrate, which solder mask opened and lots of ground vias are deployed underneath the die to effectively conduct the heat out of the package.
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Key words
GSM-EDGE-TD-SCDMA-TD-LTE applications,RF front-end complexity,class-F CMOS power amplifier,4G multimode multiband cellular radios,filters,switches,RF footprint reduction,fully integrated multimode TDD transmit front-end module,TXM,2-layer laminate LGA module,multimode multiband power amplifier paths,1P6M CMOS process,power combiners,harmonic filters,3M2V IPD die,SP10T antenna,1P3M SOI process,PA transistors,solder mask,ground vias,thermal conductivity,size 0.153 mum,size 0.18 mum,Si
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