A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over $100\times $ for Storage Class Memory Applications

Win-San Khwa,Meng-Fan Chang,Jau-Yi Wu,Ming-Hsiu Lee,Tzu-Hsiang Su,Keng-Hao Yang,Tien-Fu Chen,Tien-Yen Wang,Hsiang-Pang Li,M. BrightSky,SangBum Kim,Hsiang-Lam Lung,Chung H. Lam

IEEE J. Solid State Circuits（2017）

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摘要

For multilevel cell (MLC) phase change memory (PCM), resistance drift (R-drift) phenomenon causes cell resistance to increase with time, even at room temperature. As a result, the fixed-threshold-retention (FTR) raw-bit-error-rate (RBER) surpasses practical ECC correction ability within hours after being programmed. This study proposes a resistance drift compensation (RDC) scheme to mitigate R-dri...

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关键词

Phase change materials,Resistance,Electrical resistance measurement,Phase change random access memory,Temperature measurement,Programming

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