Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing.
IEEE Consumer Electronics Magazine(2017)
摘要
Resistive random-access memory (ReRAM) is regarded as one of the most promising alternative nonvolatile memory technologies for its advantages in very-high-storage density, simple structure, low power consumption, and long endurance, as well as good compatibility with traditional complimentary metal-oxide-semiconductor (CMOS) technology. In addition to the data storage, ReRAM can also be used for ...
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关键词
Computer architecture,Electrodes,Random access memory,Switches,Resistance,Microprocessors
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