Gate-Controlled WSe 2 Transistors Using a Buried Triple-Gate Structure

In the present paper, we show tungsten diselenide (WSe 2 ) devices that can be tuned to operate as n -type and p -type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe 2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.