Investigation of the structural, electrical, and optical properties of MnAl2Se4 layers grown using the hot-wall deposition technique

MnAl2Se4 layers were grown using the hot-wall deposition technique with an attached reservoir tail. Precise control of the vapor pressure in the reservoir was thought to play an important role in the grown of a stoichiometric layer. From the relation between the reciprocal temperature and the carrier concentration, we extracted the dominant trap level as 96.1 meV in the high-temperature region and 13.9 meV in the middle-temperature region. Thus, from a log-log plot between the mobility and the temperature, the mobility showed the different temperature-dependent decreases of the mobility at temperatures above 100 K: T −1/2 in the temperature range of 100 225 K. The mobility decreased in proportion to T 1 in the low-temperature range of T u003c 100 K. By analyzing the optical absorption results, the bandgap variation matched E g (T) = E g (0) − 3.19 × 10−3 T 2/(T + 488) well, where E g (0) is estimated to be 3.5616 eV. Consequently, low-temperature growth of MnAl2Se4 layers was achieved by using the hot-wall deposition technique.