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Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers

Samuel W. LaGasse,Cory D. Cress,Harold L. Hughes,Ji Ung Lee

IEEE Transactions on Nuclear Science（2017）

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Abstract
We demonstrate a quantum transport model for total ionizing dose (TID) effects in graphene devices fabricated on silicon dioxide (SiO2). The scattering matrix method was used to compare transfer characteristics with experimental measurements. To match the pristine transfer curve, the contact on-site energy levels were pinned to +75 meV relative to the channel. TID effects were modeled by introduci...
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Key words
Logic gates,Graphene devices,Electric potential,Electron traps,Lattices,Radiation effects
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