Reduction Of Die-Bonding Interface Thermal Resistance For High-Power Leds Through Embedding Packaging Structure

IEEE Transactions on Power Electronics(2016)

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Abstract
Thermal management is a key issue for high-power light-emitting diodes (LEDs). Reducing the die-bonding interface thermal resistance is one of the most important issues for thermal management. In this study, a novel packaging structure was proposed to reduce the die-bonding interface thermal resistance. The LED chip was embedded into a square groove at the lead-frame substrate and the gap between the edges of the LED chip and square groove was filled with boron nitride (BN)/silicone composite. So the heat generated from the chip could be dissipated from the side surfaces to the substrate, and the heat-dissipation area was increased. The results show that the thermal management performance of LEDs has been significantly improved by the new embedding packaging structure. The die-bonding interface thermal resistance can be reduced by more than 20%. The junction temperature rise can be reduced by 14%.
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Key words
LEDs,embedding packaging structure,die-bonding interface,thermal resistance,BN/silicone
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