Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Pascal Chevalier,Michael Schröter,Colombo R. Bolognesi,Vincenzo d'Alessandro,Maria Alexandrova,Josef Böck,Ralf Flückiger,Sébastien Fregonese,Bernd Heinemann,Christoph Jungemann,Rickard Lövblom,Cristell Maneux,Olivier Ostinelli,Andreas Pawlak,Niccolò Rinaldi,Holger Rücker,Gerald Wedel,Thomas Zimmer

Proceedings of the IEEE（2017）

引用 112|浏览75

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摘要

This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.

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关键词

Heterojunction bipolar transistors,Silicon germanium,HEMTs,MODFETs,BiCMOS integrated circuits,Annealing,Integrated circuit modeling

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