High frequency analysis and characterization of TSVs for high-speed integrated systems
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)(2016)
摘要
Three-dimensional integration technology is deemed as the most promising alternative in post Moore's Law era. The electrical performance of through silicon vias (TSVs), which are the key enabler for 3D integration, is crucial to modeling and design of 3D systems, especially for high-speed systems. This paper gives a partial review on recent progress in the field with the focus on the high-frequency analysis and characterization.
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关键词
Through silicon via,MOS effect,Noise coupling
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