1200 V FS-IGBT with electric field modulation layer to improve trade-off between avalanche ruggedness and on-state voltage drop

In this Letter, a novel 1200 V FS- insulated gate bipolar transistors (IGBT) is proposed to improve the trade-off between avalanche ruggedness and on-state voltage drop. The proposed IGBT features the high doping and thin n-layer under trench gates and we call it the electric field modulation layer (EFM layer). Under the avalanche condition, the EFM layer can form the sharp electric filed distribu...