Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers.
Symposium on VLSI Circuits-Digest of Papers（2016）
摘要
Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.
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关键词
read disturb errors,read cycles,cold data,cloud data centers,versatile triple-level-cell NAND flash memory control,TLC NAND flash memory control,read hot-cold migration,read voltage control,edge word line protection,data center application SSD
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