Determination of photoelectric parameters of hydrogenated amorphous silicon by the photo electromotive-force technique

Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers' lifetime, dielectric relaxation time, electron and holes diffusion lengths and their mobility-lifetime products were estimated from the experimental data.