Multilevel Operation In Oxide Based Resistive Ram With Set Voltage Modulation

H. Aziza,H. Ayari,S. Onkaraiah,M. Moreau,J-M. Portal,M. Bocquet

2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS)（2016）

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摘要

In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology.

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关键词

Multilevel cell,Resistive RAM,Oxide-based RAM (OxRRAM),variability

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