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Extending HKMG Scaling on CMOS with FDSOI: Advantages and Integration Challenges

D. H. Triyoso,Rick Carter,J. Kluth,K. Hempel,M. Gribelyuk,L. Kang,A. Kumar, B. Mulfinger,P. Javorka,K. Punchihewa, A. Child,T. McArdle,J. Holt, S. Straub,R. Sporer,P. Chen

International Conference on IC Design & Technology（2016）

Cited 15|Views20
Key words
FDSOI,high-k metal gate,strain,SiGe,CMOS scaling
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