Fine-granularity Tile-Level Parallelism in Non-Volatile Memory Architecture with Two-Dimensional Bank Subdivision.
Design Automation Conference（2016）
关键词
fine-granularity tile-level parallelism,nonvolatile memory architecture,two-dimensional bank subdivision,phase-change memory,PCM,resistive RAM,RRAM,DRAM replacement,finegrained nonvolatile memory,NVM memory bank,subarray-level parallelism,DRAM memory bank,energy reduction,partial-activation,multiactivation,background writes,fine-granularity memory access
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