The progresses of MRAM as a memory to save energy consumption and its potential for further reduction

Critical switching current, I _sw , of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Q _w , becomes the order of 100-150fC. With the small Q _w , MRAM starts to save energy consumption by 70-80% compared with a conventional memory system. Analysis of the write pulse-width dependence of I _w revealed a further potential of perpendicular MTJ to reduce I _w and Q _w . STT-MRAM is thought to achieve a further reduction of energy consumption.