Highly Reliable Taox Reram With Centralized Filament For 28-Nm Embedded Application
Symposium on VLSI Technology-Digest of Technical Papers(2015)
摘要
For 28-nm embedded application, we have proposed a TaOx-based ReRAM with precise filament positioning and high thermal stability. The cell was realized using several newly-developed process technologies and cell structures: low-damage etching, cell side oxidation and encapsulated cell structure. As a result, we succeeded for the first time in forming a filament at the cell center. In addition, we confirmed the feasibility of 20-nm cell size. Excellent reliability was achieved in 2-Mbit 40-nm ReRAM: 100k cycles and 10 years' retention at 85 degrees C was demonstrated.
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关键词
highly reliable ReRAM,centralized filament,embedded application,precise filament positioning,high thermal stability,low-damage etching,cell side oxidation,encapsulated cell structure,size 28 nm,temperature 85 degC
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