A 55-nm, 0.86-Volt operation, 75MHz high speed, 96uA/MHz low power, wide voltage supply range 2M-bit split-gate embedded Flash

Caleb Y.-S. Cho,J. C. Wang,Lion Huang,Milo Weng, Y. F. Lin, C. F. Lee, C. W. Lien, H. C. Feng,Tassa Yang, S. P. Liao,J. J. Wu,Y. D. Chih,Sreedhar Natarajan

VLSI-DAT（2013）

引用 3|浏览5

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摘要

Firstly an embedded 55-nm Flash design based on split-gate Flash bitcell is proposed by 32KX64 IP. It demonstrates competitive features for production by wide voltage supply range (VDD=0.86~1.32V, and VD25=1.6~3.6V), low-power read feature (96uA/MHz, 64 bits), fast wake-up time from power off (<; 2us), and fast operation read speed up to 75MHz (VDD=1.08V).

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关键词

embedded systems,flash memories,integrated circuit design,low-power electronics,embedded flash design,frequency 75 MHz,low power wide voltage supply range split-gate embedded flash memory,size 55 nm,split-gate Flash bitcell,storage capacity 2 Mbit,storage capacity 64 bit,voltage 0.86 V,voltage 1.08 V,

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