A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V

Hung-Chang Yu,Ku-Feng Lin,Kai-Chun Lin,Yu-Der Chih,Sreedhar Natarajan

VLSI-DAT（2013）

Cited 0|Views17

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Abstract

To achieve the 180MHz read speed for 4.6 Mb Flash memory, we propose an adaptive WL boost driver (AWBD) and a high-speed sensing-assist (HSSA) scheme to fast activate the word-line and bitline. AWBD reduces 45% word-line rising time. HSSA establishes bitline bias within 500ps under heavy bit-line load. This work implemented in 90nm process and the access time 5.2ns is achieved.

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Key words

embedded systems,flash memories,AWBD,HSSA scheme,adaptive WL boost driver,bit-line,direct access read embedded flash memory,frequency 180 MHz,high-speed sensing-assist scheme,size 90 nm,time 500 ps,voltage 2.1 V to 3.6 V,wide range power supply,

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