High-efficiency crossbar switches using capacitively coupled signaling

2015 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)(2015)

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摘要
As process technologies have scaled, the increasing number of processor cores and memories on a single die has also driven the need for more complex on-chip interconnection networks. Crossbar switches are primary building blocks in such networks-on-chip, as they can be used as fast single-stage networks or as the core of the router switch in multi-stage networks. While crossbars offer non-blocking, single-hop, all-to-all communication, they tend to scale poorly with the number of nodes due to the latency and energy of the long wires and high-radix multiplexor structures needed. To combat these limitations, we propose a low-swing crossbar design that uses capacitively driven wires and capacitively coupled multiplexers. Capacitively driven wires offer low swing signaling, higher bandwidths, and low energy consumption, while capacitively coupled multiplexers offer reduced parasitic loading from the inactive inputs. We present a 16×16 64b low-swing crossbar switch designed in a TSMC 40nm CMOS bulk process. Post-layout simulation shows it operating at a maximum frequency of 2.2GHz, achieving a bandwidth of 2.56Tb/s at 0.9V (nominal Vdd) with an area of 0.94mm 2 . Total energy consumption for full, half, and minimum bandwidths are 110pJ, 84pJ, and 64pJ respectively, thus offering an efficiency of 10.49 Tbps/W, a 3X improvement over previously published results.
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关键词
high efficiency crossbar switches,capacitively coupled signaling,processor cores,processor memory,on-chip interconnection networks,networks-on-chip,high-radix multiplexor structures,low-swing crossbar design,capacitively driven wires,capacitively coupled multiplexers,energy consumption,reduced parasitic loading,TSMC CMOS bulk process,post-layout simulation,size 40 nm,storage capacity 64 bit,energy 64 pJ,energy 84 pJ,energy 110 pJ
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