7.5 A 128gb 2b/cell NAND Flash Memory in 14nm Technology with Tprog=640µs and 800mb/s I/O Rate
ISSCC（2016）
关键词
multi-level cell NAND flash memory,MLC NAND flash memory,cost-effective storage device,background pattern dependency,BPD,word lines,drain side WL,SSL side,program performance,equilibrium pulse scheme,smart start bias control scheme,SBC,MSB page,first cycle recovery,FCR,read enable,bi-directional data strobe,DQS,time 640 mus,bit rate 800 Mbit/s
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