SRAM Vmax stability considerations

D. Burnett,S. Balasubramanian,V. Joshi,S. Parihar, J. Higman,C. Weintraub

IRPS（2015）

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摘要

The voltage overdrive of SRAM cells is shown to be of concern as the stability at Vmax can be worse than at Vmin. The Vmax stability is especially sensitive to high resistances on single devices in the bitcell. Highlighted in this paper are SRAM Vmax stability issues observed in a 28nm technology as well as the increased susceptibility of FinFET SRAM cells for voltage overdrive issues.

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关键词

SRAM, overdrive, Vmax, reliability, BTI, Vmin, resistance, dynamic voltage, FinFET

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