A High-Linearity, 30 GS/s Track-and-Hold Amplifier and Time Interleaved Sample-and-Hold in an InP-on-CMOS Process

IEEE Journal of Solid-State Circuits(2015)

引用 30|浏览75
暂无评分
摘要
A high-speed, track-and-hold amplifier and interleaved CMOS sample-and-hold circuit are implemented in an InP-on-CMOS fabrication process. Conventional 50- Ω interchip interconnects between III-V and CMOS circuits are eliminated with heterogeneous integration of III-V on CMOS, yielding higher performance circuits at lower power consumption. The track-and-hold amplifier is based on a double-switchi...
更多
查看译文
关键词
CMOS integrated circuits,Indium phosphide,III-V semiconductor materials,Heterojunction bipolar transistors,Noise,Capacitors,CMOS technology
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要