Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications
Microelectronics Reliability(2015)
摘要
Superjunction (SJ) MOSFETs with low on-resistance and high sustain voltage are widely used as main switching power devices. For the p/n-pillars of SJ-power devices, precise doping at low-doping region below 1016cm−3 concentrations is required, and thus high-sensitivity 2D-carrier profiling of the pillars is indispensable where conventional SCM is insufficient. Previously, we developed the high-vacuum SSRM enabling high-spatial resolution and site-specific 2D-carrier profiling.
更多查看译文
关键词
resistance microscopy,power device applications,d-carrier,low-doping,high-sensitivity
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要