GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology

S. Athanasiou,C. A. Legrand, S. Cristoloveanu,P. Galy

2016 Joint International EUROSOI Workshop and International Conference Ultimate Integration Silicon（2016）

Cited 8|Views37

No score

Abstract

We propose a novel device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation, in particular in thyristor mode. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.

Translated text

Key words

CMOS,ESD,FD-SOI,Gated Diode,MOSFET,SOI,Thyristor

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined