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A 0.1/spl Mu/m 1.8V 256mb 66mhz Synchronous Burst PRAM

Sangbeom Kang,Woo-Yeong Cho,Beak-Hyung Cho,Kwangjin Lee,Changsoo Lee, Hyung-Rok Oh,Byung-Gil Choi,Qi Wang,Hye-Jin Kim,Mu-Hui Park,Yu-Hwan Ro,Suyeon Kim,Du-Eung Kim, Kang-Sik Cho,Choong-Duk Ha,Young-Ran Kim,Ki-Sung Kim, Choong-Ryeol Hwang,Choong-Keun Kwak,Hyun-Geun Byun,YunSueng Shin

International Solid-State Circuits Conference（2006）

Cited 21|Views47
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Abstract
A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S
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random-access storage,0.1 micron,1.8 V,10 ns,3.3 Mbit/s,62 ns,66 MHz,burst-read access time,charge pump system,read access time,synchronous burst PRAM,write performance
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