A 0.1/spl Mu/m 1.8V 256mb 66mhz Synchronous Burst PRAM
International Solid-State Circuits Conference(2006)
Abstract
A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S
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Key words
random-access storage,0.1 micron,1.8 V,10 ns,3.3 Mbit/s,62 ns,66 MHz,burst-read access time,charge pump system,read access time,synchronous burst PRAM,write performance
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