Al x In 1−x As y Sb 1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
Journal of Crystal Growth(2015)
摘要
AlxIn1−xAsySb1−y quaternary alloys lattice-matched to InAs were successfully grown by molecular beam epitaxy (MBE) for use as buffer layers for substrate isolation in InAs channel devices. The use of In-containing quaternary buffer layers with 5% In was found to dramatically improve the heterointerface between the buffer and a surface InAs channel layer. The composition of these alloys and the extent of lattice matching were accurately determined by double crystal X-ray measurements. A simple model was used to estimate the variation of critical thickness with lattice mismatch for AlInAsSb epitaxially grown on an InAs substrate. Layers with high Al content and low As mole fraction were grown by modulated MBE technique which was found to significantly improve the surface morphology and the composition control of the alloys. In contrast, quaternary alloys with low Al content were grown by conventional MBE and had an rms roughness of less than 0.2nm.
更多查看译文
关键词
A1. Reflection high energy electron diffraction,A3. Molecular beam epitaxy,B1: Arsenides,B1: Antimonide,B2: Semiconducting III–V materials,B2: Semiconducting quaternary compounds
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要