In-situ monitoring during MBE growth of InAs based heterostructures

The use of reflectance anisotropy spectroscopy (RAS) for the real time monitoring of the growth of InAs based heterostructures by molecular beam epitaxy within the photon energy range 1.5–5.0eV is reported. The complete desorption of the native oxide for InAs substrates was monitored using a single wavelength and epitaxial growth of InAs was also monitored under both the As- and In-rich surface reconstructions. Further the changes in the RAS and reflectance data for ternary and quaternary layers demonstrated the usefulness of this system as an in-situ tool for monitoring the composition of layers for this important class of narrow gap semiconductors. In addition, emissivity corrected pryometry temperature was measured using the RAS system. Growth rates for the individual layers in a heterostructure were also determined from an analysis of the reflectance data.