Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

•Temperature dependent mobility and low-frequency noise of a-IGZO TFTs are studied.•The dominant scattering mechanism of channel carriers is found Coulomb scattering.•The border trap density and the distribution of filled interface traps are deduced.•Annealing at higher temperature is found effective to reduce border trap density.