Analysis of heat dissipation of epitaxial graphene devices on SiC

Kangmu Lee,Jeongsun Moon,Thomas Oh,Samuel Kim,P M Asbeck

Solid-State Electronics（2014）

引用 8|浏览12

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摘要

•A 3-D thermal simulation for analysis of heat dissipation of graphene resistors on silicon carbide substrates is presented.•Impacts of device parameters on thermal resistance were investigated.•Pulsed I–V measurements were performed at different temperatures and pulse widths to extract device thermal resistance.•Short pulse (200ns) cannot suppress the self-heating of graphene device entirely.

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关键词

Graphene,Self-heating,Heat dissipation,Interface resistance,3-D thermal simulation,Temperature dependent pulsed I–V

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