Modeling the impact of substrate depletion in FDSOI MOSFETs

Solid-State Electronics(2015)

引用 30|浏览26
暂无评分
摘要
•Substrate depletion in FDSOI transistor is studied for different ground planes.•BSIMIMG model is verified on both NMOS and PMOS FET.•Model shows excellent geometrical and temperature scaling.•Substrate depletion effect is modeled accurately using proposed model.
更多
查看译文
关键词
Substrate depletion,BSIM-IMG,FDSOI,MOSFET,Compact model
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要