Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device

C–V characteristics of TiN (3nm)/HfO2 (2.4nm)/ILSiO2 gate stack for N/PMOS CAP without and with different P/BF2 implant energies and doses, respectively, after 400°C PMA, (a) with different P implant energies at fixed dose of 3×1014cm−2. (b) With different P implant doses at fixed energy of 2.3keV. (c) With different BF2 implant energies at fixed dose of 4.8×1014cm−2. (d) With different BF2 implant doses at fixed energy of 4.4keV.