W-band differential power amplifier design in 45nm low power CMOS

Solid-State Electronics(2013)

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摘要
In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascade and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. (C) 2013 Elsevier Ltd. All rights reserved.
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关键词
CMOS,mm-Wave,Power amplifier
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