Superconducting platinum silicide for electron cooling in silicon

M J Prest,J S Richardsonbullock,Q T Zhao,J T Muhonen,D Gunnarsson,Mika Prunnila,V A Shah,T E Whall,E H C Parker,D R Leadley

Solid-State Electronics（2015）

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摘要

•We use platinum silicide as a superconductor contact for electron cooling in silicon.•The TC of PtSi is reduced from 1K to 0.79K using a thin film (10nm) of PtSi.•The device I–V characteristics are simulated using a tunnelling model.•Electron cooling is from 100mK to 50mK is deduced from fitting I–V data to a model.•The model shows that the thin layer, and reduced TC, is beneficial for cooling.

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关键词

Silicon,Silicide,Superconductor,Electron cooling,Low-temperature

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