Z2-FET: A promising FDSOI device for ESD protection
Solid-State Electronics(2014)
摘要
In this work, the use of the Z2-FET (Zero subthreshold swing and Zero impact ionization FET) for Electro-Static Discharge (ESD) protections is demonstrated. The device, fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator technology, features an extremely sharp off-on switch and an adjustable triggering voltage (Vt1). The principle of operation, relying on the modulation of electron and hole injection barriers, is reviewed. The impact of process modules and design parameters on electrical characteristics is analyzed with TCAD simulations, showing that very low leakage current (Ileak) and triggering capability adapted to local protection schemes are achievable. Experimental results validate the possible use of this device as an ESD protection in the 28nm FDSOI technology.
更多查看译文
关键词
promising fdsoi device,esd protection
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要