Effects of thermal treatment on radiative properties of HVPE grown InP layers

Serge Luryi,Oleg Semyonov,Arsen V Subashiev,J H Abeles,W Chan,Z A Shellenbarger,Wondwosen Metaferia,Sebastian Lourdudoss

Solid-State Electronics（2014）

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摘要

•We studied radiative properties of 21μm thick InP layers grown by HVPE.•Radiative efficiency is comparable to best bulk InP virgin wafers.•Luminescence of HVPE layers-unlike bulk-does not degrade upon heat treatment.•Enables the implementation of free-standing epitaxial InP scintillator structures.

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关键词

Bulk InP luminescence,Thermal degradation,Thick epitaxial layers,Hydride vapor phase epitaxy,Semiconductor scintillators

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