The Effect of PbS on Crystallization Behavior of GeS2‐Ga2S3‐Based Chalcogenide Glasses

Glass-ceramics of PbS-doped 80GeS(2)20Ga(2)S(3) were fabricated by heat treatments of base glasses at T-g+30 degrees C for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X-ray diffraction and Raman results indicated that Ga2S3 and GeS2 crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS(2)20Ga(2)S(3) glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system.