Graphene Film Growth on Cu Foil via Direct Carbon Atoms Deposition by Using SSMBE
ADVANCED BUILDING MATERIALS AND SUSTAINABLE ARCHITECTURE, PTS 1-4(2012)
摘要
Graphene film has been successfully grown on Cu foil by directly depositing carbon atoms with a solid source molecular beam epitaxy (SSMBE) system. The structural and electronic properties of the graphene sample are characterized by Raman spectroscopy, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS). Results indicate that the graphene has the tubostratic stacking structure.
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关键词
Graphene,Cu foil,Solid Source Molecular Beam Epitaxy (SSMBE)
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