Heat treatment of glassy carbon implanted with cesium at room and high temperatures

The effect of annealing temperature on the surface morphology and on the diffusion of cesium ions implanted into glassy carbon (Sigradur® G) is reported. The samples were implanted with 360keV cesium ions to a fluence of 2×1016 ions/cm2 at room temperature, at 350 and at 600°C. The room temperature implanted samples were isochronally vacuum annealed for 1h at temperatures from 200 to 600°C. All samples were studied by Rutherford backscattering scattering (RBS) and scanning electron microscopy (SEM).