Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled Inas Quantum Dots Using in Situ Patterning

We present a promising method for the fabrication of high-quality InAs site-controlled quantum dots (QDs) by combining electron beam lithography with wet chemical etching and metalorganic chemical vapor deposition (MOCVD) in situ patterning. The (100) GaAs substrate is patterned with nanoholes by thermal etching and the dots are directly grown inside. This method should avoid the introduction of the surface defects that occurs usually with standard lithography techniques. The thermal etching time is a new growth parameter used to control the shape and size of the QDs. The optical characterization at low temperatures reveals QDs with a small linewidth down to 63 µeV.